Invited speakers

Lectures of School
David Awschalom (University of Chicago)
Quantum spintronics with semiconductors

Hideo Ohno (Tohoku University)
Introduction to Spintronics Devices for VLSI

Jelena Klinovaja (University of Basel)
Topological Quantum States

Kyung-Jin Lee (Korea University)
Spintronics based on Antiferromagnets and Ferrimagnets

Daniel Loss (University of Basel and Riken)
Spin Qubits in Semiconducting Nanostructures

Nitin Samarth (Penn State University)
Topological spintronics: concepts and devices

Mathias Kläui (University of Mainz)
Tutorial on Domain Wall and Skyrmion Dynamics
-from fundamental Science to Applications-

Invited speakers of conference(confirmed)
Geoff Beach (MIT)
Current-Induced Switching in a Magnetic Insulator

Manuel Bibes (Universite Paris-Sud)
Highly efficient spin-charge conversion in engineered SrTiO3-based 2-dimensional electron systems

Alberta Bonanni (Johannes Kepler University)
Perspectives for III-nitrides: spin-orbitronics and piezoelectro magnetization effects

Russell Deacon (Riken)
Signatures of Topological Superconductivity in the dynamics of HgTe Josephson Junctions

Burkard Hillebrands (TU Kaiserslautern)
Physics and applications of focused spin-wave beams and caustics

Tomas Jungwirth (Academy of Sciences of the Czech Republic)
Electric field switching of antiferromagnetic multi-level bit-cells by pulse-length scaled down to a picosecond

Kensuke Kobayashi (Osaka University)
Spin-dependent Current Fluctuations in Mesoscopic Conductors

Eiji Saitoh (IMR, Tohoku University)
Spinon and Phonon in Spintronics

Gian Salis (IBM Zurich)
Control of spin precession by drift and diffusion in a 2D electron gas

So Takei(CUNY Queens College)
Prediction for spin current and its noise generated across biased quantum spin chains

Lieven Vandersypen (TU Delft)
A "Spins-inside" Quantum Processor

Hiroki Takesue (NTT Basic Research Laboratory)
Artificial spin network based on coupled optical parametric oscillators for solving Ising model

Siddharta Omar (Groningen University)
Bias induced up to 100% spin injection/detection polarization and 90 micron spin relaxation