Invited speakers
Lectures of SchoolDavid Awschalom (University of Chicago)
Quantum spintronics with semiconductors
Hideo Ohno (Tohoku University)
Introduction to Spintronics Devices for VLSI
Jelena Klinovaja (University of Basel)
Topological Quantum States
Kyung-Jin Lee (Korea University)
Spintronics based on Antiferromagnets and Ferrimagnets
Daniel Loss (University of Basel and Riken)
Spin Qubits in Semiconducting Nanostructures
Nitin Samarth (Penn State University)
Topological spintronics: concepts and devices
Mathias Kläui (University of Mainz)
Tutorial on Domain Wall and Skyrmion Dynamics
-from fundamental Science to Applications-
Invited speakers of conference(confirmed)
Geoff Beach (MIT)
Current-Induced Switching in a Magnetic Insulator
Manuel Bibes (Universite Paris-Sud)
Highly efficient spin-charge conversion in engineered SrTiO3-based 2-dimensional electron systems
Alberta Bonanni (Johannes Kepler University)
Perspectives for III-nitrides: spin-orbitronics and piezoelectro magnetization effects
Russell Deacon (Riken)
Signatures of Topological Superconductivity in the dynamics of HgTe Josephson Junctions
Burkard Hillebrands (TU Kaiserslautern)
Physics and applications of focused spin-wave beams and caustics
Tomas Jungwirth (Academy of Sciences of the Czech Republic)
Electric field switching of antiferromagnetic multi-level bit-cells by pulse-length scaled down to a picosecond
Kensuke Kobayashi (Osaka University)
Spin-dependent Current Fluctuations in Mesoscopic Conductors
Eiji Saitoh (IMR, Tohoku University)
Spinon and Phonon in Spintronics
Gian Salis (IBM Zurich)
Control of spin precession by drift and diffusion in a 2D electron gas
So Takei(CUNY Queens College)
Prediction for spin current and its noise generated across biased quantum spin chains
Lieven Vandersypen (TU Delft)
A "Spins-inside" Quantum Processor
Hiroki Takesue (NTT Basic Research Laboratory)
Artificial spin network based on coupled optical parametric oscillators for solving Ising model
Siddharta Omar (Groningen University)
Bias induced up to 100% spin injection/detection polarization and 90 micron spin relaxation